李恩龙 副教授
邮箱：enlong@shu.edu.cn
上海大学微电子学院
导师介绍：
从事集成电路先进节点器件的开发与集成应用，迄今在集成电路领域发表SCI论文50余篇，其中以第一/通讯作者发表Nature Communications（2篇）, Advanced Materials（3篇），Advanced Functional Materials，IEEE Electronic Device Letters等高影响力的学术论文17篇，被引3700余次，h-index 38。主持国家自然科学基金面上项目、青年基金项目和中国博士后科学基金站中特别资助等国家/省部级项目5项。
招收微电子、光电子、电子信息和集成电路等相关专业背景的硕士研究生。
研究方向：
集成电路先进节点器件、感存算一体与智能显示器件
教育背景：
2022年博士毕业于福州大学信息光电技术专业
2017年本科毕业于福州大学光电信息科学与工程专业
工作经历：
2025年05月-至今 上海大学 副教授
2022年08月-2025年04月 复旦大学 博士后
科研成果及获奖情况：
在相关领域发表SCI论文50余篇，入选上海市“超级博士后”激励计划
近五年代表性论文：
1.E. Li ,W. He , R. Wang, C. Zhang, H. Zhou, Y. Liu, Y. Yuan, K. Loh, J. Chu, W. Li*. Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. Nature communications 2025, 16, 9382. IF：18.1
2.E. Li , W. Wang, Y. Liu, R. Wang, C. Luo, H. Zhou, S. Chen, S. Chen, Z. Xie, K. Zhu, J. Chu, W. Li*. Ferroelectric Transistors:from Materials Innovation to Intelligent Electronic Systems. Advanced Materials 2025, 38, 15480. IF：29.1
3.Z. Liu, C. Gao, J. Yang , Z. Chen, E. Li*, J. Li, M. Li*and J. Zhang. Memristor devices for next-generation computing:from performance optimization to application-specific co-design. International Journal of Extreme Manufacturing 2026, 8, 012004. IF：25.1
4.E. Li, C. Gao, R. Yu, X. Wang, L. He, Y. Hu, H. Chen, H. Chen*, T. Guo. MXene based Saturation Organic Vertical Photoelectric Transistors with Low Subthreshold Swing. Nature communications 2022, 13, 2898. IF：18.1
5.Q. Zhang#, E. Li#, Y. Wang, C. Gao, C. Wang, L. Li, D. Geng, H. Chen*, W. Chen, W. Hu*. Ultralow-Power Vertical Transistors for Multilevel Decoding Modes. Advanced Materials 2023, 35, 2208600. IF：29.1
6.H. Xu#, F. Sun#, E. Li#, W. Guo, L. Hua, R. Wang, W. Li*, J. Chu, W. Liu*, J. Luo, Z. Sun*. Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing Advanced Materials 2024, 37, 2414339. IF：29.1
7.E. Li, X. Wang, X. Yu, R. Yu, W. Li, T. Guo, J. Chu, H. Chen*. Multi-factor Modulated Organic Bulk Heterojunction Synaptic Transistor Enabled by Ligand Engineering for Centrosymmetric In-sensor Computing. Advanced Functional Materials 2024, 34, 2314980. IF：19.9
8.C. Zhang#, E. Li#, C. Gao, R. Wang, X. Liu, Y. Liu, F. Yuan, W. Shi, Y.-F. Lin, J. Chu, W. Li*. Selenium Interface Layers Boost High Mobility and Switch Ratios In van der Waals Electronics. Nano Letters, 2025, 25, 655. IF：9.5
9.E. Li, Z. Rao, X. Wang, Y. Liu, R. Yu, G. Chen, H. Chen*, T. Guo. Direct Fabrication of Stretchable Electronics on a Programmable Stiffness Substrate with 100% Strain Isolation. IEEE Electron Device Letters. 2021, 42, 1484.IF：4.7
10.C. Zhang, E. Li*, H. Zhou, C. Xu, W. Li*. Simulation of 2D ReS2/WSe2 based complementary field-effect transistors towards 1 nm technology node Microelectronic Engineering 2024, 292, 112225. IF：3.7
11.E. Li, X. Wu, Q. Chen, S. Wu, L. He, R. Yu, Y. Hu, H. Chen*, T. Guo. Nanoscale Channel Organic Ferroelectric Synaptic Transistor Array for High Recognition Accuracy Neuromorphic Computing. Nano Energy 2021, 85, 106010. IF：16.7
12.X. Wang#, E. Li#, Y. Liu, S. Lan, H. Yang, Y. Yan, L. Shan, Z. Lin, H. Chen*, T. Guo. Stretchable Vertical Organic Transistors and Their Applications in Neurologically Systems. Nano Energy 2021, 90, 106497. IF：16.7
13.E. Li, W. He, R. Yu, L. He, X. Wu, Q. Chen, Y. Liu, H. Chen*, T. Guo. High-density Reconfigurable Synaptic Transistors Targeting a Minimalist Neural Network. ACS Applied Materials & Interfaces. 2021, 13, 28564. IF：7.8
